Single-crystalline GaN microdisk arrays grown on graphene for flexible micro-LED application

We report the growth of single-crystalline GaN microdisk arrays on graphene and their application in flexible light-emitting diodes (LEDs). Graphene layers were directly grown on -sapphire substrates using chemical vapor deposition and employed as substrates for GaN growth. Position-controlled GaN m...

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Bibliographic Details
Published in:Nanotechnology 2024-02, Vol.35 (8), p.85603
Main Authors: Fabunmi, Tobiloba Grace, Lee, Seokje, Kim, Han Ik, Yoo, Dongha, Lee, Jamin, Kim, Imhwan, Ali, Asad, Jang, Daniel, Lee, Sangmin, Lee, Changgu, Kim, Miyoung, Yi, Gyu-Chul
Format: Article
Language:English
Subjects:
flexible device
GaN
graphene
micro-LEDs
MOVPE
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Summary:We report the growth of single-crystalline GaN microdisk arrays on graphene and their application in flexible light-emitting diodes (LEDs). Graphene layers were directly grown on -sapphire substrates using chemical vapor deposition and employed as substrates for GaN growth. Position-controlled GaN microdisks were laterally overgrown on the graphene layers with a micro-patterned SiO mask using metal-organic vapor-phase epitaxy. The as-grown GaN microdisks exhibited excellent single crystallinity with a uniform in-plane orientation. Furthermore, we fabricated flexible micro-LEDs by achieving heteroepitaxial growth of -GaN, In Ga N/GaN multiple quantum wells, and -GaN layers on graphene-coated sapphire substrates. The GaN micro-LED arrays were successfully transferred onto bendable substrates and displayed strong blue light emission under room illumination, demonstrating their potential for integration into flexible optoelectronic devices.
ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/ad0e92