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III-V compound semiconductor devices: Optical detectors

This article presents a review of the historical developments in optical detectors and discusses the motivations for interest in III-V semiconductors for optical-detector applications. Early device work in both depletion-mode photodiodes and avalanche photodiodes in III-V semiconductors is covered a...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1984-11, Vol.31 (11), p.1643-1655
Main Authors: Stillman, G.E., Robbins, V.M., Tabatabaie, N.
Format: Article
Language:English
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Summary:This article presents a review of the historical developments in optical detectors and discusses the motivations for interest in III-V semiconductors for optical-detector applications. Early device work in both depletion-mode photodiodes and avalanche photodiodes in III-V semiconductors is covered as well as the improvements that have been made in avalanche photodiode structures through work in silicon. Also, the results of ionization coefficient measurements on III-V compounds are summarized. Finally, several examples of recent avalanche photodiodes that utlilize the unique properties of heterostructures are presented.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1984.21765