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III-V compound semiconductor devices: Optical detectors
This article presents a review of the historical developments in optical detectors and discusses the motivations for interest in III-V semiconductors for optical-detector applications. Early device work in both depletion-mode photodiodes and avalanche photodiodes in III-V semiconductors is covered a...
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Published in: | IEEE transactions on electron devices 1984-11, Vol.31 (11), p.1643-1655 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Citations: | Items that cite this one |
Online Access: | Get full text |
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Summary: | This article presents a review of the historical developments in optical detectors and discusses the motivations for interest in III-V semiconductors for optical-detector applications. Early device work in both depletion-mode photodiodes and avalanche photodiodes in III-V semiconductors is covered as well as the improvements that have been made in avalanche photodiode structures through work in silicon. Also, the results of ionization coefficient measurements on III-V compounds are summarized. Finally, several examples of recent avalanche photodiodes that utlilize the unique properties of heterostructures are presented. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/T-ED.1984.21765 |