Microwave low-noise AlGaAs/InGaAs HBT''s with p(+)-regrownbase contacts

This paper reports low-noise AlGaAs/InGaAs heterojunction bipolar transistors (HBT's) with p( )-regrown base contacts. To reduce the thermal and shot noises, we have reduced R(B) by using a p ( )-regrown base contact and have reduced tau(B) by using a compositionally-graded thin base layer. As...

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Bibliographic Details
Published in:IEEE electron device letters 1998-04, Vol.19 (4), p.121-123
Main Authors: Dodo, H, Amamiya, Y, Niwa, T, Mamada, M, Goto, N, Shimawaki, H
Format: Article
Language:English
Online Access:Get full text
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Summary:This paper reports low-noise AlGaAs/InGaAs heterojunction bipolar transistors (HBT's) with p( )-regrown base contacts. To reduce the thermal and shot noises, we have reduced R(B) by using a p ( )-regrown base contact and have reduced tau(B) by using a compositionally-graded thin base layer. As a result, F(min ) values of 0.9, 1.1, 1.2, and 1.6 dB were obtained at 2, 6, 12, and 18 GHz, respectively. These low-noise characteristics of our HBT's show high potential for low-noise application
ISSN:0741-3106
DOI:10.1109/55.663534