Growth and Optimization of Extremely High-Pulse-Power Graded-Index Separate Confinement Heterostructure Quantum Well AlGaAs/InGaAs Diode Lasers with Broadened Waveguides

Material quality is an essential prerequisite and a major challenge for the fabrication of high-power, 980-nm, strained-quantum-well (SQW) InGaAs lasers. We report our work aimed at metal-organic chemical vapor deposition (MOCVD) growth optimization and epitaxial quality analysis of various graded-i...

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Bibliographic Details
Published in:Journal of electronic materials 2004-02, Vol.34 (2), p.156-160
Main Authors: Li, J Z, Martinelli, R U, Khalfin, V B, Shellenbarger, Z, Braun, A M, Capewell, D, Willner, B I, Abeles, J H
Format: Article
Language:English
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Summary:Material quality is an essential prerequisite and a major challenge for the fabrication of high-power, 980-nm, strained-quantum-well (SQW) InGaAs lasers. We report our work aimed at metal-organic chemical vapor deposition (MOCVD) growth optimization and epitaxial quality analysis of various graded-index separate confinement heterostructure (GRINSCH) QW AlGaAs/InGaAs laser structures. Systematic investigation of doping level control and minimization of oxygen incorporation in AlGaAs were performed. Background oxygen levels of 10(15) cm-3 were obtained with n-(Si) and p-(C) doping concentrations as high as 1 x 10(18) cm-3 and 3 x 10(18) cm-3, respectively, for Al0.4Ga0.8As layers. Double crystal x-ray (DCXR), room-temperature photoluminescence (PL) mapping, Hall effect measurements, and secondary ion-mass spectroscopy (SIMS) techniques were used to evaluate material quality. A record, multimode, pulsed output power of 52.1 W has been obtained from 100-mm x 2-mm broad-stripe lasers made from these materials. The devices demonstrate low threshold current, low cavity losses, and kink-free light-current characteristics.
ISSN:0361-5235