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Growth of highly strained InGaAs quantum wells on GaAs substrates—effect of growth rate
Highly strained In x Ga 1− x As ( x∼0.5) quantum wells were grown on GaAs substrates at low temperature by metal organic vapor-phase epitaxy. By depositing this material in the kinetically limited growth regime, high-quality pseudomorphic layers were obtained. It was found that by using an extremely...
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| Published in: | Journal of crystal growth 2005-01, Vol.274 (1), p.85-89 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c439t-e3f9241e2d987004f1dfa797aa08dc5f245f9f6f40cd0fd8e3848e649d3f718f3 |
| container_end_page | 89 |
| container_issue | 1 |
| container_start_page | 85 |
| container_title | Journal of crystal growth |
| container_volume | 274 |
| creator | Tan, H.H. Lever, P. Jagadish, C. |
| description | Highly strained In
x
Ga
1−
x
As (
x∼0.5) quantum wells were grown on GaAs substrates at low temperature by metal organic vapor-phase epitaxy. By depositing this material in the kinetically limited growth regime, high-quality pseudomorphic layers were obtained. It was found that by using an extremely slow growth rate, the Stranski–Krastanov transition for self-assembled quantum dots formation could be suppressed and the resulting layer had very smooth surface morphology. It is suggested that step flow motion of adatoms dominates at such slow growth rates. By using this technique, a double quantum well structure with room temperature luminescence at 1215
nm and spectral linewidth of 48
meV was obtained. |
| doi_str_mv | 10.1016/j.jcrysgro.2004.10.031 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_28943170</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024804012734</els_id><sourcerecordid>28943170</sourcerecordid><originalsourceid>FETCH-LOGICAL-c439t-e3f9241e2d987004f1dfa797aa08dc5f245f9f6f40cd0fd8e3848e649d3f718f3</originalsourceid><addsrcrecordid>eNqFUEtu2zAQJYoEqOv0CoU2zU7O8GOJ2iUIGtdAgG7aRVYESw5tGrKUcKQE3uUQPWFPEqpO0GU2M8Dj-wwfY184LDjw6mK32Ll0oE3qFwJAZXABkn9gM65rWS4BxAmb5SlKEEp_ZJ-IdgBZyWHG7lapfxq2RR-Kbdxs20NBQ7KxQ1-su5W9ouJhtN0w7osnbFsq-q74h9L4eyIOSH-f_2AI6IbJY3N0mx7O2GmwLeHn1z1nv26-_bz-Xt7-WK2vr25Lp2QzlChDIxRH4Rtd5_MD98HWTW0taO-WQahlaEIVFDgPwWuUWmmsVONlqLkOcs7Oj773qX8YkQazj-TysbbDfiQjdKMkryETqyPRpZ4oYTD3Ke5tOhgOZmrS7Mxbk2ZqcsJzk1n49TXBkrNtSLZzkf6rK9kIyCFzdnnkYf7uY8RkyEXsHPqYcj_G9_G9qBeuOo8K</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28943170</pqid></control><display><type>article</type><title>Growth of highly strained InGaAs quantum wells on GaAs substrates—effect of growth rate</title><source>ScienceDirect Freedom Collection 2022-2024</source><creator>Tan, H.H. ; Lever, P. ; Jagadish, C.</creator><creatorcontrib>Tan, H.H. ; Lever, P. ; Jagadish, C.</creatorcontrib><description>Highly strained In
x
Ga
1−
x
As (
x∼0.5) quantum wells were grown on GaAs substrates at low temperature by metal organic vapor-phase epitaxy. By depositing this material in the kinetically limited growth regime, high-quality pseudomorphic layers were obtained. It was found that by using an extremely slow growth rate, the Stranski–Krastanov transition for self-assembled quantum dots formation could be suppressed and the resulting layer had very smooth surface morphology. It is suggested that step flow motion of adatoms dominates at such slow growth rates. By using this technique, a double quantum well structure with room temperature luminescence at 1215
nm and spectral linewidth of 48
meV was obtained.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2004.10.031</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Surface process ; A3. MOVPE ; A3. Strained QWs ; B2. InGaAs/GaAs ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Iii-v semiconductors ; Materials science ; Methods of nanofabrication ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures ; Photoluminescence ; Physics ; Quantum wells ; Self-assembly</subject><ispartof>Journal of crystal growth, 2005-01, Vol.274 (1), p.85-89</ispartof><rights>2004 Elsevier B.V.</rights><rights>2005 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c439t-e3f9241e2d987004f1dfa797aa08dc5f245f9f6f40cd0fd8e3848e649d3f718f3</citedby><cites>FETCH-LOGICAL-c439t-e3f9241e2d987004f1dfa797aa08dc5f245f9f6f40cd0fd8e3848e649d3f718f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16392094$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Tan, H.H.</creatorcontrib><creatorcontrib>Lever, P.</creatorcontrib><creatorcontrib>Jagadish, C.</creatorcontrib><title>Growth of highly strained InGaAs quantum wells on GaAs substrates—effect of growth rate</title><title>Journal of crystal growth</title><description>Highly strained In
x
Ga
1−
x
As (
x∼0.5) quantum wells were grown on GaAs substrates at low temperature by metal organic vapor-phase epitaxy. By depositing this material in the kinetically limited growth regime, high-quality pseudomorphic layers were obtained. It was found that by using an extremely slow growth rate, the Stranski–Krastanov transition for self-assembled quantum dots formation could be suppressed and the resulting layer had very smooth surface morphology. It is suggested that step flow motion of adatoms dominates at such slow growth rates. By using this technique, a double quantum well structure with room temperature luminescence at 1215
nm and spectral linewidth of 48
meV was obtained.</description><subject>A1. Surface process</subject><subject>A3. MOVPE</subject><subject>A3. Strained QWs</subject><subject>B2. InGaAs/GaAs</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Iii-v semiconductors</subject><subject>Materials science</subject><subject>Methods of nanofabrication</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Quantum wells</subject><subject>Self-assembly</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqFUEtu2zAQJYoEqOv0CoU2zU7O8GOJ2iUIGtdAgG7aRVYESw5tGrKUcKQE3uUQPWFPEqpO0GU2M8Dj-wwfY184LDjw6mK32Ll0oE3qFwJAZXABkn9gM65rWS4BxAmb5SlKEEp_ZJ-IdgBZyWHG7lapfxq2RR-Kbdxs20NBQ7KxQ1-su5W9ouJhtN0w7osnbFsq-q74h9L4eyIOSH-f_2AI6IbJY3N0mx7O2GmwLeHn1z1nv26-_bz-Xt7-WK2vr25Lp2QzlChDIxRH4Rtd5_MD98HWTW0taO-WQahlaEIVFDgPwWuUWmmsVONlqLkOcs7Oj773qX8YkQazj-TysbbDfiQjdKMkryETqyPRpZ4oYTD3Ke5tOhgOZmrS7Mxbk2ZqcsJzk1n49TXBkrNtSLZzkf6rK9kIyCFzdnnkYf7uY8RkyEXsHPqYcj_G9_G9qBeuOo8K</recordid><startdate>20050115</startdate><enddate>20050115</enddate><creator>Tan, H.H.</creator><creator>Lever, P.</creator><creator>Jagadish, C.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20050115</creationdate><title>Growth of highly strained InGaAs quantum wells on GaAs substrates—effect of growth rate</title><author>Tan, H.H. ; Lever, P. ; Jagadish, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c439t-e3f9241e2d987004f1dfa797aa08dc5f245f9f6f40cd0fd8e3848e649d3f718f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>A1. Surface process</topic><topic>A3. MOVPE</topic><topic>A3. Strained QWs</topic><topic>B2. InGaAs/GaAs</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Iii-v semiconductors</topic><topic>Materials science</topic><topic>Methods of nanofabrication</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Quantum wells</topic><topic>Self-assembly</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tan, H.H.</creatorcontrib><creatorcontrib>Lever, P.</creatorcontrib><creatorcontrib>Jagadish, C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tan, H.H.</au><au>Lever, P.</au><au>Jagadish, C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of highly strained InGaAs quantum wells on GaAs substrates—effect of growth rate</atitle><jtitle>Journal of crystal growth</jtitle><date>2005-01-15</date><risdate>2005</risdate><volume>274</volume><issue>1</issue><spage>85</spage><epage>89</epage><pages>85-89</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>Highly strained In
x
Ga
1−
x
As (
x∼0.5) quantum wells were grown on GaAs substrates at low temperature by metal organic vapor-phase epitaxy. By depositing this material in the kinetically limited growth regime, high-quality pseudomorphic layers were obtained. It was found that by using an extremely slow growth rate, the Stranski–Krastanov transition for self-assembled quantum dots formation could be suppressed and the resulting layer had very smooth surface morphology. It is suggested that step flow motion of adatoms dominates at such slow growth rates. By using this technique, a double quantum well structure with room temperature luminescence at 1215
nm and spectral linewidth of 48
meV was obtained.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2004.10.031</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 2005-01, Vol.274 (1), p.85-89 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28943170 |
| source | ScienceDirect Freedom Collection 2022-2024 |
| subjects | A1. Surface process A3. MOVPE A3. Strained QWs B2. InGaAs/GaAs Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Iii-v semiconductors Materials science Methods of nanofabrication Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Photoluminescence Physics Quantum wells Self-assembly |
| title | Growth of highly strained InGaAs quantum wells on GaAs substrates—effect of growth rate |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T22%3A59%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20of%20highly%20strained%20InGaAs%20quantum%20wells%20on%20GaAs%20substrates%E2%80%94effect%20of%20growth%20rate&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Tan,%20H.H.&rft.date=2005-01-15&rft.volume=274&rft.issue=1&rft.spage=85&rft.epage=89&rft.pages=85-89&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/10.1016/j.jcrysgro.2004.10.031&rft_dat=%3Cproquest_cross%3E28943170%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c439t-e3f9241e2d987004f1dfa797aa08dc5f245f9f6f40cd0fd8e3848e649d3f718f3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=28943170&rft_id=info:pmid/&rfr_iscdi=true |