Loading…
Visualizing the Hierarchical Evolution of Aryl–Metal Bonding in Organometallic Nanostructures on Ag(111)
On-surface dehalogenative coupling reactions are promising for constructing nanostructures with diverse properties and functionalities. Extensive efforts have been devoted to single aryl-halogen (C-X) substituents and substitutions at various functionalization sites (typically including meta- and pa...
Saved in:
Published in: | The journal of physical chemistry letters 2023-12, Vol.14 (48), p.10819-10824 |
---|---|
Main Authors: | , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | On-surface dehalogenative coupling reactions are promising for constructing nanostructures with diverse properties and functionalities. Extensive efforts have been devoted to single aryl-halogen (C-X) substituents and substitutions at various functionalization sites (typically including meta- and para-substitutions) to generate aryl-aryl single bonds. Moreover, multiple C-X substituents at the ortho-site and the peri- and bay-regions have been applied to create a variety of ring scaffolds. However, for multiple C-X substituents, the hierarchy of aryl-metal bond formation and dissociation remains elusive. Herein, by combining scanning tunneling microscopy imaging and density functional theory calculations, we have visualized and demonstrated the hierarchical evolution of aryl-metal bonding in organometallic intermediates involved in a dehalogenative coupling reaction on Ag(111), using a molecular precursor with both para-substitution and potential bay-region substitution. Our results elucidate how metal atoms are progressively embedded into and removed from organometallic intermediates, enhancing the understanding of on-surface dehalogenative coupling reactions for the controlled construction of the desired nanostructures. |
---|---|
ISSN: | 1948-7185 1948-7185 |
DOI: | 10.1021/acs.jpclett.3c02950 |