Design of a broadband polarization controller based on silicon nitride-loaded thin-film lithium niobate

A novel design of a polarization controller based on “etch-less” Si 3 N 4 -loaded thin film LiNbO 3 is described. Broadband operation in the spectral range between 1.45 and 1.65 µm is achieved by using a mode evolution TM/TE splitter/converter, two mode evolution 3-dB couplers, and two electro-optic...

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Bibliographic Details
Published in:Optics express 2023-10, Vol.31 (22), p.35542-35551
Main Authors: Čtyroký, Jiří, Petráček, Jiří, Richter, Ivan, Kuzmiak, Vladimír
Format: Article
Language:English
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Summary:A novel design of a polarization controller based on “etch-less” Si 3 N 4 -loaded thin film LiNbO 3 is described. Broadband operation in the spectral range between 1.45 and 1.65 µm is achieved by using a mode evolution TM/TE splitter/converter, two mode evolution 3-dB couplers, and two electro-optic phase shifters. Numerical simulations show that the on-chip insertion loss should not exceed 1 dB. A single TE-mode output can be adjusted by applying control voltages lower than 10 V for an arbitrary input polarization state.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.501411