Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure

• Published in: Thin solid films 2006-10, Vol.515 (2), p.768-770
• Main Authors: Iwaya, M., Kasugai, H., Kawashima, T., Iida, K., Honshio, A., Miyake, Y., Kamiyama, S., Amano, H., Akasaki, I.
• Format: Article
• Language: English
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Electronics; Etching and cleaning; Exact sciences and technology; GaN; LED; Light extraction efficiency; Materials science; Methods of nanofabrication; Moth-eye structure; Nanoscale materials and structures: fabrication and characterization; Optoelectronic devices; Other topics in nanoscale materials and structures; Physics; Physics of gases, plasmas and electric discharges; Physics of plasmas and electric discharges; Plasma applications; Self-assembly; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SiC substrate
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2005.12.188

Group III nitride-based blue light-emitting diodes with a moth-eye structure at the bottom of a semi-insulating transport 6H-SiC substrate were fabricated. Self-assembled Au nanomasks and CF 4 reactive ion etching were used for the fabrication of the moth-eye structure. We succeeded in forming cones with a mean period of approximately 160 nm and a mean height of approximately 400–600 nm. The period of 160 nm is shorter than the optical wavelength. The light extraction efficiency and the corresponding output power of the moth-eye-structured light-emitting diodes (LEDs) increased approximately three-fold those of LEDs with a conventional structure.