Ultra Thin Photo Resist

• Published in: Materials technology (New York, N.Y.) N.Y.), 2005-03, Vol.20 (1), p.53-53
• Format: Article
• Language: English
• ISSN: 1066-7857

Nanometrix Inc. have announced that the firm's research team has been successful in producing films of photo resist on silicon wafers d*25nm in thickness. Dr. Picard V-P R&D leading a team that includes Juan Schneider V-P Technologies & Mame Fatou-Seye have produced 8 inch diameter wafers coated with a 25nm layer of PMMA with a surface roughness of 1nm. As semiconductor firms strive to keep up with Moore's Law a major technological "Brick Wall" has been the line width limitations caused by the "height to width ratio" due to thick photo resist layers currently used in the photolithography process. Currently, typical photo resist layers are in the 120-150nm range. Because of the thickness, scattering and edge effects are at present preventing feature size reduction in semiconductor devices. For more information contact Patrick T. O'Connor, General Manager, Nanomatrix Inc., 329 rue de la Commune Ouest Suite 200, Montreal, QC H2Y 2E1, Canada; Tel: [phone] x15319; Fax: [phone]; e-mail: [e-mail].