An HBT unilateral model to design distributed amplifiers

A novel heterojunction bipolar transistor (HBT) unilateral model oriented to a fast prediction of the performance of HBT monolithic-microwave integrated-circuit distributed amplifiers is proposed. The HBT unilateral model includes, by simple expressions, the effects caused by the HBT parasitics. A g...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1999-06, Vol.47 (6), p.795-798
Main Authors: Paoloni, C., D'Agostino, S.
Format: Article
Language:English
Subjects:
Attenuation
Charts
Cutoff frequency
Distributed amplifiers
Distributed computing
Equivalent circuits
FETs
Field effect MMICs
HEMTs
Heterojunction bipolar transistors
Mathematical models
Microwaves
Predictive models
Semiconductor devices
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Summary:A novel heterojunction bipolar transistor (HBT) unilateral model oriented to a fast prediction of the performance of HBT monolithic-microwave integrated-circuit distributed amplifiers is proposed. The HBT unilateral model includes, by simple expressions, the effects caused by the HBT parasitics. A graphical design procedure for HBT distributed amplifiers is also proposed. This method is based on a set of generalized charts and represents a simple and fast design tool for designers. Comparisons between the performance of specially designed HBT distributed amplifiers and the results obtained using the HBT unilateral model demonstrate the validity of the proposed approach.
ISSN:0018-9480
1557-9670
DOI:10.1109/22.769352