Low noiseIn(0.32)(AlGa)(0.68)As/In(0.43)Ga(0.57)As metamorphic HEMT on GaAs substrate with 850 mW/mm output powerdensity

A double-pulse-doped InAlGaAs/In(0.43)Ga(0.57)As metamorphic high electron mobility transistor (MHEMT) on a GaAs substrate is demonstrated with state-of-the-art noise and power performance, This 0.15 mum T-gate MHEMT exhibits high on- and off-state breakdown (V(ds) > 6 V and V(dg) > 13 V, resp...

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Bibliographic Details
Published in:IEEE electron device letters 2000-01, Vol.21 (1), p.5-8
Main Authors: Whelan, C S, Hoke, W F, McTaggart, R A, Lardizabal, M, Lyman, P S, Marsh, P F, Kazior, T E
Format: Article
Language:English
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Summary:A double-pulse-doped InAlGaAs/In(0.43)Ga(0.57)As metamorphic high electron mobility transistor (MHEMT) on a GaAs substrate is demonstrated with state-of-the-art noise and power performance, This 0.15 mum T-gate MHEMT exhibits high on- and off-state breakdown (V(ds) > 6 V and V(dg) > 13 V, respectively) which allows biasing at V(ds) > 5 V. The 0.6 mm device shows > 27 dBm output power (850 mW/mm) at 35 GHz-the highest reported power density of any MHEMT. Additionally, a smaller gate periphery 2x50 mum (0.1 mm) 43% MHEMT exhibits a F(min)=1.18 dB and 10.7 dB associated gain at 25 GHz, and also is the first noise measurement of a -40% In MHEMT. A double recess process with selective etch chemistries provides for high yields
ISSN:0741-3106
DOI:10.1109/55.817435