Multiple-quantum-well GaInAs/GaInAsP tapered broad-area amplifiers with monolithically integrated waveguide lens for high-power applications

• Published in: IEEE photonics technology letters 1993-08, Vol.5 (8), p.916-919
• Main Authors: Koyama, F., Liou, K.-Y., Dentai, A.G., Tanbun-ek, T., Burrus, C.A.
• Format: Article
• Language: English
• Subjects: Applied sciences; Circuit properties; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Integrated optics. Optical fibers and wave guides; Laser optical systems: design and operation; Lenses; Optical and optoelectronic circuits; Optical fiber devices; Optics; Other fiber-optical devices; Physics; Power amplifiers; Power generation; Quantum well devices; Resonators, cavities, amplifiers, arrays, and rings; Semiconductor lasers; Semiconductor optical amplifiers; Semiconductor waveguides; Superluminescent diodes; Waveguide lasers
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/68.238253

A 1.48- mu m tapered broad-area semiconductor laser amplifier with a monolithically integrated waveguide lens as demonstrated. The gain saturation characteristics of the tapered amplifier were examined. A maximum output power of 300 mW and a 3-dB saturation power of 200 mW under quasi-CW conditions were obtained from the amplifier without the waveguide lens. Output power of 200 mW was obtained with a broad emission spectrum of approximately 30 nm when the device was used as a superluminescent diode. The amplified output was focused to a single lobe by the monolithically integrated aspheric waveguide lens, which may be useful for efficient coupling of the output into a single-mode fiber.< >