An application of polarized domains in ferroelectric thin films using scanning probe microscope

The feasibility of utilizing PZT films as future data storage media was investigated using a modified AFM. Applying voltages between a conductive AFM tip and the PZT films causes the switching of ferroelectric domains. The domains are observed using an EFM imaging technique. The experimental results...

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Bibliographic Details
Published in:IEEE transactions on ultrasonics, ferroelectrics, and frequency control ferroelectrics, and frequency control, 2000-07, Vol.47 (4), p.801-807
Main Authors: Hyunjung Shin, Kyung-Mee Lee, Won-Kyu Moon, Jong Up Jeon, Geunbae Lim, Pak, Y.E., Jeong Hwan Park, Ki Hyun Yoon
Format: Article
Language:English
Subjects:
Atomic force microscopy
Conductive films
Data storage
Electric potential
Electrostatics
Ferroelectric films
Ferroelectric materials
Ferroelectricity
Lead zirconate titanates
Magnetic force microscopy
Polarization
Probes
Thin films
Transistors
Voltage
Writing
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Summary:The feasibility of utilizing PZT films as future data storage media was investigated using a modified AFM. Applying voltages between a conductive AFM tip and the PZT films causes the switching of ferroelectric domains. The domains are observed using an EFM imaging technique. The experimental results and calculations revealed that the electrostatic force generated between the polarized area and the tip is a main contributor for the imaging of the polarized domains. The written features on ferroelectric films were less than 100 nm in diameter, implying the possibility of realizing data storage devices with ultra-high area density. The disappearance of the polarized images without any applied voltage was observed, which is a drawback in this application of PZT thin films.
ISSN:0885-3010
1525-8955
DOI:10.1109/58.852061