On the hot-carrier-induced post-stress interface trap generation in n-channel MOS transistors

A continued fast interface trap generation is observed in n-channel MOS transistors after termination of the hot-carrier stress. The magnitude of this post-stress effect is strongly dependent on the conditions of the preceding stress, on the post-stress conditions and on the process parameters. For...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1994-03, Vol.41 (3), p.413-419
Main Authors: Bellens, R., de Schrijver, E., Van den Bosch, G., Groeseneken, G., Heremans, P., Maes, H.E.
Format: Article
Language:English
Subjects:
Applied sciences
Charge carrier processes
Charge pumps
Current measurement
Electron traps
Electronics
Exact sciences and technology
Hot carriers
Hydrogen
MOSFETs
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stress measurement
Thermal degradation
Thermal stresses
Transistors
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Summary:A continued fast interface trap generation is observed in n-channel MOS transistors after termination of the hot-carrier stress. The magnitude of this post-stress effect is strongly dependent on the conditions of the preceding stress, on the post-stress conditions and on the process parameters. For measurements at 293 K, a simple model is proposed which is based on the release of hydrogen by the thermal detrapping of holes, and which can explain the observed dependencies. The importance of the post-stress D/sub it/-generation is illustrated for the case of dynamic stress conditions where it can lead to an apparently deviating degradation behavior.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.275228