An InAlAs-InGaAs OPFET with responsivity above 200 A/W at 1.3-mum wavelength

The optoelectronic dc and RF behaviour of an InAlAs-InGaAs optically controlled field-effect transistor based on a high electron mobility transistor layer structure is investigated at 1.3-mum wavelength light. The device is backside-illuminated to increase the responsivity. A transistor with 0.3-mum...

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Bibliographic Details
Published in:IEEE photonics technology letters 1999-01, Vol.11 (1), p.117-119
Main Authors: Marso, M, Gersdorf, P, Fox, A, ster, A, Hodel, U, Lambertini, R, Kordos, P
Format: Article
Language:English
Online Access:Get full text
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Summary:The optoelectronic dc and RF behaviour of an InAlAs-InGaAs optically controlled field-effect transistor based on a high electron mobility transistor layer structure is investigated at 1.3-mum wavelength light. The device is backside-illuminated to increase the responsivity. A transistor with 0.3-mum gate length and an active area of 50x50 mum(2) exhibits a responsivity of 235 A/W, at 11-muW incident optical power. The photoconductive response is higher than for an metal-semiconductor-metal photodetector with the same InGaAs absorption layer thickness up to 10 GHz
ISSN:1041-1135
DOI:10.1109/68.736414