An InAlAs-InGaAs OPFET with responsivity above 200 A/W at 1.3-mum wavelength

The optoelectronic dc and RF behaviour of an InAlAs-InGaAs optically controlled field-effect transistor based on a high electron mobility transistor layer structure is investigated at 1.3-mum wavelength light. The device is backside-illuminated to increase the responsivity. A transistor with 0.3-mum...

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Published in:IEEE photonics technology letters 1999-01, Vol.11 (1), p.117-119
Main Authors: Marso, M, Gersdorf, P, Fox, A, ster, A, Hodel, U, Lambertini, R, Kordos, P
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container_title IEEE photonics technology letters
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creator Marso, M
Gersdorf, P
Fox, A
ster, A
Hodel, U
Lambertini, R
Kordos, P
description The optoelectronic dc and RF behaviour of an InAlAs-InGaAs optically controlled field-effect transistor based on a high electron mobility transistor layer structure is investigated at 1.3-mum wavelength light. The device is backside-illuminated to increase the responsivity. A transistor with 0.3-mum gate length and an active area of 50x50 mum(2) exhibits a responsivity of 235 A/W, at 11-muW incident optical power. The photoconductive response is higher than for an metal-semiconductor-metal photodetector with the same InGaAs absorption layer thickness up to 10 GHz
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title An InAlAs-InGaAs OPFET with responsivity above 200 A/W at 1.3-mum wavelength
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