In situ-doped amorphous Si(0.8)C(0.2) emitterbipolar transistors

The fabrication and characterization of in situ-doped amorphous Si (0.8)C(0.2) emitter transistors are presented. Emitter Gummel numbers exceeding 10(14) s/cm(4) are reported for the first time in this type of structure. The high values obtained for G(E) are believed to be due to the valance band di...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 1999-11, Vol.20 (11), p.592-594
Main Authors: Orpella, A, Bardes, D, Alcubilla, R, Marsal, L F, Pallares, J
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The fabrication and characterization of in situ-doped amorphous Si (0.8)C(0.2) emitter transistors are presented. Emitter Gummel numbers exceeding 10(14) s/cm(4) are reported for the first time in this type of structure. The high values obtained for G(E) are believed to be due to the valance band discontinuity between the Si(0.8)C(0.2) layer and the crystalline part of the emitter, which effectively blocks the minority carrier injection from the base into the noncrystalline part of the emitter
ISSN:0741-3106
DOI:10.1109/55.798054