Overbias Photon Emission from Light-Emitting Devices Based on Monolayer Transition Metal Dichalcogenides

Tunneling light-emitting devices (LEDs) based on transition metal dichalcogenides (TMDs) and other two-dimensional (2D) materials are a new platform for on-chip optoelectronic integration. Some of the physical processes underlying this LED architecture are not fully understood, especially the emissi...

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Bibliographic Details
Published in:Nano letters 2023-12, Vol.23 (23), p.10908-10913
Main Authors: Shan, Shengyu, Huang, Jing, Papadopoulos, Sotirios, Khelifa, Ronja, Taniguchi, Takashi, Watanabe, Kenji, Wang, Lujun, Novotny, Lukas
Format: Article
Language:English
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Summary:Tunneling light-emitting devices (LEDs) based on transition metal dichalcogenides (TMDs) and other two-dimensional (2D) materials are a new platform for on-chip optoelectronic integration. Some of the physical processes underlying this LED architecture are not fully understood, especially the emission at photon energies higher than the applied electrostatic potential, so-called overbias emission. Here we report overbias emission for potentials that are near half of the optical bandgap energy in TMD-based tunneling LEDs. We show that this emission is not thermal in nature but consistent with exciton generation via a two-electron coherent tunneling process.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.3c03155