NOTFET: a high-frequency InP nonlinear transistor

A device called the nonlinearly optimized transconductance field-effect transistor (NOTFET) has been developed for nonlinear circuit applications. An InP NOTFET with two g/sub m/ peaks based on InGaAs and InAlAs channels was designed fabricated, and tested for harmonic generation up to 12 GHz, demon...

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Bibliographic Details
Published in:IEEE electron device letters 1990-12, Vol.11 (12), p.582-584
Main Authors: Majidi-Ahy, R., Bandy, S., Ching, L.Y., Glenn, M., Nishimoto, C., Weng, S.L., Zdasiuk, G.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit testing
Electronics
Exact sciences and technology
FETs
Frequency conversion
HEMTs
Indium compounds
Indium gallium arsenide
Indium phosphide
MODFETs
Nonlinear circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transconductance
Transistors
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Summary:A device called the nonlinearly optimized transconductance field-effect transistor (NOTFET) has been developed for nonlinear circuit applications. An InP NOTFET with two g/sub m/ peaks based on InGaAs and InAlAs channels was designed fabricated, and tested for harmonic generation up to 12 GHz, demonstrating the device concept and its advantages compared to conventional FETs and HEMTs. Multipeak g/sub m//V/sub GS/ characteristics also can be obtained by using a multiheterojunction material structure with uncoupled quantum wells, a possibility which is under investigation.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.63046