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NOTFET: a high-frequency InP nonlinear transistor
A device called the nonlinearly optimized transconductance field-effect transistor (NOTFET) has been developed for nonlinear circuit applications. An InP NOTFET with two g/sub m/ peaks based on InGaAs and InAlAs channels was designed fabricated, and tested for harmonic generation up to 12 GHz, demon...
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Published in: | IEEE electron device letters 1990-12, Vol.11 (12), p.582-584 |
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container_end_page | 584 |
container_issue | 12 |
container_start_page | 582 |
container_title | IEEE electron device letters |
container_volume | 11 |
creator | Majidi-Ahy, R. Bandy, S. Ching, L.Y. Glenn, M. Nishimoto, C. Weng, S.L. Zdasiuk, G. |
description | A device called the nonlinearly optimized transconductance field-effect transistor (NOTFET) has been developed for nonlinear circuit applications. An InP NOTFET with two g/sub m/ peaks based on InGaAs and InAlAs channels was designed fabricated, and tested for harmonic generation up to 12 GHz, demonstrating the device concept and its advantages compared to conventional FETs and HEMTs. Multipeak g/sub m//V/sub GS/ characteristics also can be obtained by using a multiheterojunction material structure with uncoupled quantum wells, a possibility which is under investigation.< > |
doi_str_mv | 10.1109/55.63046 |
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ispartof | IEEE electron device letters, 1990-12, Vol.11 (12), p.582-584 |
issn | 0741-3106 1558-0563 |
language | eng |
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source | IEEE Electronic Library (IEL) Journals |
subjects | Applied sciences Circuit testing Electronics Exact sciences and technology FETs Frequency conversion HEMTs Indium compounds Indium gallium arsenide Indium phosphide MODFETs Nonlinear circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transconductance Transistors |
title | NOTFET: a high-frequency InP nonlinear transistor |
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