Analysis of bipolar junction transistors with a Gaussian base-dopant impurity-concentration profile

A method for a quantitative charge-control analysis of bipolar base-junction transistors with a Gaussian dopant impurity-concentration profile is demonstrated. Analytical expressions for the base transit time are given for two different Gaussian impurity-concentration profiles with the peak concentr...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2001-12, Vol.48 (12), p.2945-2947
Main Authors: Guoxin Li, Neugroschel, A., Chih-Tang Sah, Hemmenway, D., Rivoli, T., Maddux, J.
Format: Article
Language:English
Subjects:
Approximation
Dopants
Error analysis
Exact solutions
Gaussian
Gaussian distributions
Mathematical analysis
Semiconductor devices
Transit time
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Summary:A method for a quantitative charge-control analysis of bipolar base-junction transistors with a Gaussian dopant impurity-concentration profile is demonstrated. Analytical expressions for the base transit time are given for two different Gaussian impurity-concentration profiles with the peak concentration at the edge, and within the quasi-neutral base layer. It is also shown that approximating the Gaussian profile by a simple exponential profile results in only an insignificant error in the charge-control analysis.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.974733