Pluminescence properties of Er3+ doped SiO2-ZrO2 prepared using Er-Zr double alkoxide

Er3+ doped SiO2-ZrO2 sol-gel materials were prepared using Er-Zr double alkoxide, in an attempt to incorporate a large amount of Er3+ in the silica system without clustering of Er3+. Strong photoluminescence emission and long lifetime due to homogenous distribution of Er3+ ions were obtained in Er3+...

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Bibliographic Details
Published in:Journal of materials science 2006-02, Vol.41 (4), p.1285-1287
Main Authors: MI AE LIM, ATHAR, Taimur, SANG IL SEOK, WOON JIN CHUNG, JU, Jung-Jin, LEE, Myung-Hyun, SEOK IN HONG
Format: Article
Language:English
Subjects:
Amorphous materials, glasses and other disordered solids
Applied sciences
Chemistry
Circuit properties
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electric, optical and optoelectronic circuits
Electronics
Elements and non-metal compounds (oxides, hydroxides, hydrides, sulfides, carbides, ...)
Exact sciences and technology
Inorganic chemistry and origins of life
Integrated optics. Optical fibers and wave guides
Materials science
Optical and optoelectronic circuits
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Preparations and properties
Silicon dioxide
Waveguides, couplers, and arrays
Zirconium dioxide
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Summary:Er3+ doped SiO2-ZrO2 sol-gel materials were prepared using Er-Zr double alkoxide, in an attempt to incorporate a large amount of Er3+ in the silica system without clustering of Er3+. Strong photoluminescence emission and long lifetime due to homogenous distribution of Er3+ ions were obtained in Er3+ doped SiO2-ZrO2. The optically active Er3+ doped silica-based sol-gel materials with relatively high Er3+ concentration were prepared by using Er-Zr double alkoxide, without significant shortening of fluorescence decay lifetime. The results indicate that Er3+ doped SiO2-ZrO2 can be applied to Er3+ doped waveguide amplifiers with high gain. 9 refs.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-005-2186-2