Optical and In-Depth RBS Characterization of Porous Silicon Interference Filters

In the present work, Rutherford backscattering spectroscopy (RBS) measurements, scanning electron microscopy, and optical characterization are carried out on porous silicon (PS) multilayer interference filters in order to determine their compositional profile, homogeneity, and overall optical behavi...

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Published in:Journal of the Electrochemical Society 2005, Vol.152 (11), p.G846-G850
Main Authors: Torres-Costa, V., Pászti, F., Climent-Font, A., Martín-Palma, R. J., Martínez-Duart, J. M.
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Language:English
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cited_by cdi_FETCH-LOGICAL-c326t-e4ea4e4ccdb9485708160c035d7abae19ce913d34af70ef7da0e569f99655dcb3
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container_end_page G850
container_issue 11
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container_title Journal of the Electrochemical Society
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creator Torres-Costa, V.
Pászti, F.
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description In the present work, Rutherford backscattering spectroscopy (RBS) measurements, scanning electron microscopy, and optical characterization are carried out on porous silicon (PS) multilayer interference filters in order to determine their compositional profile, homogeneity, and overall optical behavior. In addition, RBS measurements allow determination of the porosity profile of multilayer structures. Thus, both porosity and oxidation degree are determined for each individual layer forming the stack, giving a straightforward measure of the in-depth homogeneity of these structures. Finally, the aging effects on the optical behavior and compositional profile of the PS stacks are studied by comparing as-prepared and aged multilayers. The results reveal good in-depth homogeneity of the PS multilayers and an oxygen enrichment with ambient air exposure, which results in a lowering of the effective refractive index and a blueshift of the reflectance spectra of the filters.
doi_str_mv 10.1149/1.2048229
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title Optical and In-Depth RBS Characterization of Porous Silicon Interference Filters
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