Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon 111 substrate

The high potential at microwave frequencies of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon [111] substrate for power applications has been demonstrated in this letter. For the first time, an output power density close to 1.8 W/mm and an associated power added effic...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2003-03, Vol.13 (3), p.99-101
Main Authors: Vellas, N, Gaquiere, C, Minko, A, Hoel, V, De Jaeger, J C, Cordier, Y, Semond, F
Format: Article
Language:English
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Summary:The high potential at microwave frequencies of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon [111] substrate for power applications has been demonstrated in this letter. For the first time, an output power density close to 1.8 W/mm and an associated power added efficiency of 32% have been measured on a 2 x 50 x 0.5 mum(2) HEMT with a linear power gain of 16 dB. These results constitute the state of the art.
ISSN:1531-1309
DOI:10.1109/LMWC.2003.810117