Reliability of MOSFETs as affected by the interface trap transformation process

An investigation of the long-term time-dependent degradation of the subthreshold characteristics in n-channel and p-channel MOSFETs resulting from Fowler-Nordheim electron injection is discussed. Immediately after the hot-electron injection, degradation in both n- and p-channel transistors due to th...

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Bibliographic Details
Published in:IEEE electron device letters 1989-12, Vol.10 (12), p.537-539
Main Authors: da Silva, E.F., Nishioka, Y., Kato, M., Ma, T.-P.
Format: Article
Language:English
Subjects:
Annealing
Applied sciences
Degradation
Electron traps
Electronics
Exact sciences and technology
Ionizing radiation
Laboratories
MOS capacitors
MOS devices
MOSFETs
Secondary generated hot electron injection
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Time measurement
Transistors
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Summary:An investigation of the long-term time-dependent degradation of the subthreshold characteristics in n-channel and p-channel MOSFETs resulting from Fowler-Nordheim electron injection is discussed. Immediately after the hot-electron injection, degradation in both n- and p-channel transistors due to the hot-electron-induced interface traps is observed. When measured after the hot-electron injection was terminated, however, the subthreshold slope in n-channel transistors exhibits a gradual recovery toward its preinjection level, while that in p-channel transistors continues to degrade with time. This phenomenon can be explained by the interface trap transformation process, which is characterized by a gradual reduction of the hot-electron-induced interface traps above midgap and a gradual increase of the interface traps below midgap.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.43132