A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design

Fully scalable, analytical HF noise parameter equations for bipolar transistors are presented and experimentally tested on high-speed Si and SiGe technologies. A technique for extracting the complete set of transistor noise parameters from Y parameter measurements only is developed and verified. Fin...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 1997-09, Vol.32 (9), p.1430-1439
Main Authors: Voinigescu, S.P., Maliepaard, M.C., Showell, J.L., Babcock, G.E., Marchesan, D., Schroter, M., Schvan, P., Harame, D.L.
Format: Article
Language:English
Subjects:
Background noise
Bipolar transistors
Circuit noise
Equations
Integrated circuit noise
Low-noise amplifiers
Noise figure
Noise measurement
Semiconductor device noise
Silicon germanium
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Summary:Fully scalable, analytical HF noise parameter equations for bipolar transistors are presented and experimentally tested on high-speed Si and SiGe technologies. A technique for extracting the complete set of transistor noise parameters from Y parameter measurements only is developed and verified. Finally, the noise equations are coupled with scalable variants of the HICUM and SPICE-Gummel-Poon models and are employed in the design of tuned low noise amplifiers (LNA's) in the 1.9-, 2.4-,and 5.8-GHz bands.
ISSN:0018-9200
1558-173X
DOI:10.1109/4.628757