Geometry optimization for dark soliton combs in thin multimode silicon nitride microresonators

Silicon nitride (Si N ) has been well established as an ultralow-loss material for integrated photonics, particularly for the generation of dissipative Kerr soliton frequency combs, enabling various applications for optical metrology, biological imaging, and coherent telecommunications. Typically, b...

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Bibliographic Details
Published in:Optics express 2023-12, Vol.31 (25), p.41420-41427
Main Authors: Zhang, Yaojing, Zhang, Shuangyou, Bi, Toby, Del'Haye, Pascal
Format: Article
Language:English
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Summary:Silicon nitride (Si N ) has been well established as an ultralow-loss material for integrated photonics, particularly for the generation of dissipative Kerr soliton frequency combs, enabling various applications for optical metrology, biological imaging, and coherent telecommunications. Typically, bright soliton generation in Si N devices requires thick (>600 nm) films to fulfill the condition of anomalous dispersion at telecom wavelengths. However, thick films of ultralow-loss Si N (>400 nm) often suffer from high internal stress, leading to cracks. As an alternative approach, thin Si N films (
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.503637