Subpicosecond InP/InGaAs heterostructure bipolar transistors

Bipolar transistors with subpicosecond extrinsic delay are discussed. These InP/InGaAs heterostructure transistors show a unity-current-gain cutoff frequency f/sub /T=165 GHz and maximum oscillation frequency f/sub MAX/=100 GHz at room temperature. The authors model shows that an f/sub /T beyond 386...

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Bibliographic Details
Published in:IEEE electron device letters 1989-06, Vol.10 (6), p.267-269
Main Authors: Chen, Y.-K., Nottenburg, R.N., Panish, M.B., Hamm, R.A., Humphrey, D.A.
Format: Article
Language:English
Subjects:
Applied sciences
Bipolar transistors
Circuits
Cutoff frequency
Doping
Electronics
Exact sciences and technology
Heterojunction bipolar transistors
Indium gallium arsenide
Indium phosphide
Propagation delay
Ring oscillators
Scattering parameters
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:Bipolar transistors with subpicosecond extrinsic delay are discussed. These InP/InGaAs heterostructure transistors show a unity-current-gain cutoff frequency f/sub /T=165 GHz and maximum oscillation frequency f/sub MAX/=100 GHz at room temperature. The authors model shows that an f/sub /T beyond 386 GHz is obtainable by further vertical scaling. Ring oscillators implemented with nonthreshold logic (NTL) and transistors having f/sub MAX/=71 GHz show a propagation delay of 14.7 ps and 5.4 mW average power consumption per stage.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.31742