Semiconductor thickness and back-gate voltage effects on the gate tunnel current in the MOS/SOI system with an ultrathin oxide

The effects of the semiconductor layer thickness and the back-gate voltage on the current-voltage (I-V) characteristics of the MOS/SOI tunnel diode with an aluminum gate and n-type semiconductor layers are theoretically investigated. If the semiconductor thickness is reduced or the back-gate voltage...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2000-12, Vol.47 (12), p.2347-2351
Main Authors: Majkusiak, B., Badri, M.H.
Format: Article
Language:English
Subjects:
Devices
Electric potential
Gates
Metal oxide semiconductors
MIS devices
Semiconductors
Tunnel diodes
Tunnels (transportation)
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The effects of the semiconductor layer thickness and the back-gate voltage on the current-voltage (I-V) characteristics of the MOS/SOI tunnel diode with an aluminum gate and n-type semiconductor layers are theoretically investigated. If the semiconductor thickness is reduced or the back-gate voltage is more negative, the total thermal generation current decreases and the gate-oxide thickness critical for transition from the quasiequilibrium strong inversion state to the nonequilibrium state increases. If the MOS/SOI tunnel diode is in the transition range between the nonequilibrium and quasiequilibrium states, a positive increase of the back-gate voltage V/sub BG/ results in a strong increase of the majority carrier tunnel current. This back-gate effect may be exploited in more functional devices based on the MOS/SOI tunnel diode.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.887019