Space radiation effects on optoelectronic materials and components for a 1300 nm fiber optic data bus

The authors report energy-dependent proton and Co-60 test results and analysis assessing performance of In/sub 0.53/Ga/sub 0.47/As photodetectors and In/sub 0.71/Ga/sub 0.29/As/sub 0.61/P/sub 0.39/ laser diodes for satellite applications. Displacement damage degradation in the InGaAs photodetector i...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1992-12, Vol.39 (6), p.1982-1989
Main Authors: Marshall, P.W., Dale, C.J., Burke, E.A.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Degradation
Diode lasers
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
III-V semiconductor materials
Indium gallium arsenide
Optical and optoelectronic circuits
Performance analysis
Photodetectors
Protons
Radiation effects
Satellites
Testing
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Summary:The authors report energy-dependent proton and Co-60 test results and analysis assessing performance of In/sub 0.53/Ga/sub 0.47/As photodetectors and In/sub 0.71/Ga/sub 0.29/As/sub 0.61/P/sub 0.39/ laser diodes for satellite applications. Displacement damage degradation in the InGaAs photodetector is interpreted using DLTS. Novel calculations of the nonionizing energy loss (NIEL) for protons in InGaAs allow damage assessment using a general technique for evaluating displacement damage in orbit. Data are presented confirming the proton energy dependence of NIEL in a III-V material over the energy range of interest for spacecraft. Effects in optoelectronic devices due to total dose and ionization transients are also discussed.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.211394