Spin coating over topography

A model for predicting film thickness profiles around topographical features during spin coating is presented. This model is applicable to features of arbitrary geometry in the two lateral dimensions. This generally permits study of the planarization of real device structures, including both isolate...

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Bibliographic Details
Published in:IEEE transactions on semiconductor manufacturing 1993-02, Vol.6 (1), p.72-76
Main Authors: Peurrung, L.M., Graves, D.B.
Format: Article
Language:English
Subjects:
Applied sciences
Coatings
Electric network topology
Electronics
Equations
Exact sciences and technology
Fluid dynamics
Geometry
Lithography
Mathematical models
Microelectronic fabrication (materials and surfaces technology)
Planarization
Predictive models
Resists
Semiconductor device modeling
Semiconductor device models
Semiconductor device structures
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Spinning
Surface tension
Surface topography
Thickness control
WSI circuits
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Summary:A model for predicting film thickness profiles around topographical features during spin coating is presented. This model is applicable to features of arbitrary geometry in the two lateral dimensions. This generally permits study of the planarization of real device structures, including both isolated and neighboring features, with any orientation with respect to the wafer center. Predictions from this model agree qualitatively with measured thin-film profiles from interferograms taken during spinning. Phenomena such as pile-up and wakes result from interactions between surface tension and other driving forces in the flow.< >
ISSN:0894-6507
1558-2345
DOI:10.1109/66.210660