Surface doping using ion implantation for optimum guard layer design in COS/MOS structures

Theory and experimental results using COS/MOS devices are presented for using ion-implanted surface guard layers to replace guard bands in LSI COS/MOS circuits. The function of a guardband is to reduce leakage between neighboring devices; surface guard layers accomplish the same end with the additio...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1975-10, Vol.22 (10), p.849-857
Main Authors: Douglas, E.C., Dingwall, A.G.F.
Format: Article
Language:English
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Summary:Theory and experimental results using COS/MOS devices are presented for using ion-implanted surface guard layers to replace guard bands in LSI COS/MOS circuits. The function of a guardband is to reduce leakage between neighboring devices; surface guard layers accomplish the same end with the addition of a considerable reduction in the space required for a given COS/MOS memory cell. The price paid for the elimination of the guardbands is a tradeoff between the onset of leakage and the onset of avalanche breakdown between drain and substrate. A systematic method is presented for optimizing these two limiting voltages for a given value of field oxide thickness and for defined limits of the Q s oxide charge.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1975.18233