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Superconducting tunnel junctions for use as energy resolving X-ray detectors

The response of Nb-Al-Al/sub 2/O/sub 3/-Al-Nb superconductor-insulator-superconductor (SIS) tunnel junctions to pulsed 650-nm radiation was measured. The rise in the voltage developed across the junction increases linearly for the duration of the applied pulse. The decay time of 300 mu s is an intri...

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Bibliographic Details
Published in:IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) 1991-03, Vol.27 (2), p.2665-2668
Main Authors: Van Vechten, D., Boyer, C., Fritz, G.G., King, S., Kowaski, M.P., Lovellette, M.N., Blamire, M.G., Kirk, E., Somekh, R.E.
Format: Article
Language:English
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Summary:The response of Nb-Al-Al/sub 2/O/sub 3/-Al-Nb superconductor-insulator-superconductor (SIS) tunnel junctions to pulsed 650-nm radiation was measured. The rise in the voltage developed across the junction increases linearly for the duration of the applied pulse. The decay time of 300 mu s is an intrinsic property of the junction. The response of the junction varies linearly with incident energy over the range 35 to 200 eV/ mu m/sup 2/. Comparison with the junction response caused by higher energy particles should give insight into the microscopic details of the extremely nonequilibrium pair breaking.
ISSN:0018-9464
1941-0069
DOI:10.1109/20.133760