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Superconducting tunnel junctions for use as energy resolving X-ray detectors
The response of Nb-Al-Al/sub 2/O/sub 3/-Al-Nb superconductor-insulator-superconductor (SIS) tunnel junctions to pulsed 650-nm radiation was measured. The rise in the voltage developed across the junction increases linearly for the duration of the applied pulse. The decay time of 300 mu s is an intri...
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Published in: | IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) 1991-03, Vol.27 (2), p.2665-2668 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The response of Nb-Al-Al/sub 2/O/sub 3/-Al-Nb superconductor-insulator-superconductor (SIS) tunnel junctions to pulsed 650-nm radiation was measured. The rise in the voltage developed across the junction increases linearly for the duration of the applied pulse. The decay time of 300 mu s is an intrinsic property of the junction. The response of the junction varies linearly with incident energy over the range 35 to 200 eV/ mu m/sup 2/. Comparison with the junction response caused by higher energy particles should give insight into the microscopic details of the extremely nonequilibrium pair breaking. |
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ISSN: | 0018-9464 1941-0069 |
DOI: | 10.1109/20.133760 |