The effect of plastic strain relaxation on the morphology of Ge quantum dot superlattices

A series of Ge quantum dot superlattices were prepared to study the relationship of the dot morphology evolution with the number of layers. Strain relaxation was observed in thicker films and the dots transited from broad size distribution to size equalization and eventually to broad size distributi...

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Bibliographic Details
Published in:Journal of crystal growth 2005-02, Vol.274 (3-4), p.367-371
Main Authors: Liu, J.L., Wang, K.L., Xie, Q.H., Thomas, S.G.
Format: Article
Language:English
Subjects:
61.82.Rx
81.05.Cy
81.15.Hi
A1. Nanostructures
A3. Molecular beam epitaxy
B2. Semiconducting germanium
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Elasticity, elastic constants
Exact sciences and technology
Materials science
Mechanical and acoustical properties of condensed matter
Mechanical properties of solids
Nanoscale materials and structures: fabrication and characterization
Physics
Quantum dots
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Summary:A series of Ge quantum dot superlattices were prepared to study the relationship of the dot morphology evolution with the number of layers. Strain relaxation was observed in thicker films and the dots transited from broad size distribution to size equalization and eventually to broad size distribution again as a result of the generation of threading dislocations in the quantum dot superlattice films.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2004.10.057