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The effect of plastic strain relaxation on the morphology of Ge quantum dot superlattices
A series of Ge quantum dot superlattices were prepared to study the relationship of the dot morphology evolution with the number of layers. Strain relaxation was observed in thicker films and the dots transited from broad size distribution to size equalization and eventually to broad size distributi...
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Published in: | Journal of crystal growth 2005-02, Vol.274 (3-4), p.367-371 |
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container_end_page | 371 |
container_issue | 3-4 |
container_start_page | 367 |
container_title | Journal of crystal growth |
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creator | Liu, J.L. Wang, K.L. Xie, Q.H. Thomas, S.G. |
description | A series of Ge quantum dot superlattices were prepared to study the relationship of the dot morphology evolution with the number of layers. Strain relaxation was observed in thicker films and the dots transited from broad size distribution to size equalization and eventually to broad size distribution again as a result of the generation of threading dislocations in the quantum dot superlattice films. |
doi_str_mv | 10.1016/j.jcrysgro.2004.10.057 |
format | article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29061761</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024804013648</els_id><sourcerecordid>29061761</sourcerecordid><originalsourceid>FETCH-LOGICAL-c373t-f0a5070cfd4a9b4df41bd7e125a316ace58cf5416a590ec9d27b941ee721d5f73</originalsourceid><addsrcrecordid>eNqFkEFLwzAUx4MoOKdfQXLRW-dL2zTtTRk6BcHLPHgKWfoyM7qmJqm4b2_GFI9CSB6P3_898iPkksGMAatuNrON9ruw9m6WA5SpOQMujsiE1aLIOEB-TCbpzjPIy_qUnIWwAUhJBhPytnxHisagjtQZOnQqRKtpiF7Znnrs1JeK1vU0nZjQrfPDu-vcerfHF0g_RtXHcUtbF2kYB_SdimkChnNyYlQX8OLnnZLXh_vl_DF7flk8ze-eM12IImYGFAcB2rSlalZla0q2agWynKuCVUojr7XhZSp5A6ibNherpmSIImctN6KYkuvD3MG7jxFDlFsbNHad6tGNQeYNVExULIHVAdTeheDRyMHbrfI7yUDuTcqN_DUp9yb3_WQyBa9-NqigVWe86rUNf-mKV7VgdeJuDxym735a9DJoi73G1vrkV7bO_rfqG1Y8juE</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29061761</pqid></control><display><type>article</type><title>The effect of plastic strain relaxation on the morphology of Ge quantum dot superlattices</title><source>ScienceDirect Journals</source><creator>Liu, J.L. ; Wang, K.L. ; Xie, Q.H. ; Thomas, S.G.</creator><creatorcontrib>Liu, J.L. ; Wang, K.L. ; Xie, Q.H. ; Thomas, S.G.</creatorcontrib><description>A series of Ge quantum dot superlattices were prepared to study the relationship of the dot morphology evolution with the number of layers. Strain relaxation was observed in thicker films and the dots transited from broad size distribution to size equalization and eventually to broad size distribution again as a result of the generation of threading dislocations in the quantum dot superlattice films.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2004.10.057</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>61.82.Rx ; 81.05.Cy ; 81.15.Hi ; A1. Nanostructures ; A3. Molecular beam epitaxy ; B2. Semiconducting germanium ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Elasticity, elastic constants ; Exact sciences and technology ; Materials science ; Mechanical and acoustical properties of condensed matter ; Mechanical properties of solids ; Nanoscale materials and structures: fabrication and characterization ; Physics ; Quantum dots</subject><ispartof>Journal of crystal growth, 2005-02, Vol.274 (3-4), p.367-371</ispartof><rights>2004 Elsevier B.V.</rights><rights>2005 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c373t-f0a5070cfd4a9b4df41bd7e125a316ace58cf5416a590ec9d27b941ee721d5f73</citedby><cites>FETCH-LOGICAL-c373t-f0a5070cfd4a9b4df41bd7e125a316ace58cf5416a590ec9d27b941ee721d5f73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16568718$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Liu, J.L.</creatorcontrib><creatorcontrib>Wang, K.L.</creatorcontrib><creatorcontrib>Xie, Q.H.</creatorcontrib><creatorcontrib>Thomas, S.G.</creatorcontrib><title>The effect of plastic strain relaxation on the morphology of Ge quantum dot superlattices</title><title>Journal of crystal growth</title><description>A series of Ge quantum dot superlattices were prepared to study the relationship of the dot morphology evolution with the number of layers. Strain relaxation was observed in thicker films and the dots transited from broad size distribution to size equalization and eventually to broad size distribution again as a result of the generation of threading dislocations in the quantum dot superlattice films.</description><subject>61.82.Rx</subject><subject>81.05.Cy</subject><subject>81.15.Hi</subject><subject>A1. Nanostructures</subject><subject>A3. Molecular beam epitaxy</subject><subject>B2. Semiconducting germanium</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Elasticity, elastic constants</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Mechanical and acoustical properties of condensed matter</subject><subject>Mechanical properties of solids</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Physics</subject><subject>Quantum dots</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqFkEFLwzAUx4MoOKdfQXLRW-dL2zTtTRk6BcHLPHgKWfoyM7qmJqm4b2_GFI9CSB6P3_898iPkksGMAatuNrON9ruw9m6WA5SpOQMujsiE1aLIOEB-TCbpzjPIy_qUnIWwAUhJBhPytnxHisagjtQZOnQqRKtpiF7Znnrs1JeK1vU0nZjQrfPDu-vcerfHF0g_RtXHcUtbF2kYB_SdimkChnNyYlQX8OLnnZLXh_vl_DF7flk8ze-eM12IImYGFAcB2rSlalZla0q2agWynKuCVUojr7XhZSp5A6ibNherpmSIImctN6KYkuvD3MG7jxFDlFsbNHad6tGNQeYNVExULIHVAdTeheDRyMHbrfI7yUDuTcqN_DUp9yb3_WQyBa9-NqigVWe86rUNf-mKV7VgdeJuDxym735a9DJoi73G1vrkV7bO_rfqG1Y8juE</recordid><startdate>20050201</startdate><enddate>20050201</enddate><creator>Liu, J.L.</creator><creator>Wang, K.L.</creator><creator>Xie, Q.H.</creator><creator>Thomas, S.G.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20050201</creationdate><title>The effect of plastic strain relaxation on the morphology of Ge quantum dot superlattices</title><author>Liu, J.L. ; Wang, K.L. ; Xie, Q.H. ; Thomas, S.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-f0a5070cfd4a9b4df41bd7e125a316ace58cf5416a590ec9d27b941ee721d5f73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>61.82.Rx</topic><topic>81.05.Cy</topic><topic>81.15.Hi</topic><topic>A1. Nanostructures</topic><topic>A3. Molecular beam epitaxy</topic><topic>B2. Semiconducting germanium</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Elasticity, elastic constants</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Mechanical and acoustical properties of condensed matter</topic><topic>Mechanical properties of solids</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Physics</topic><topic>Quantum dots</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, J.L.</creatorcontrib><creatorcontrib>Wang, K.L.</creatorcontrib><creatorcontrib>Xie, Q.H.</creatorcontrib><creatorcontrib>Thomas, S.G.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, J.L.</au><au>Wang, K.L.</au><au>Xie, Q.H.</au><au>Thomas, S.G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of plastic strain relaxation on the morphology of Ge quantum dot superlattices</atitle><jtitle>Journal of crystal growth</jtitle><date>2005-02-01</date><risdate>2005</risdate><volume>274</volume><issue>3-4</issue><spage>367</spage><epage>371</epage><pages>367-371</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>A series of Ge quantum dot superlattices were prepared to study the relationship of the dot morphology evolution with the number of layers. Strain relaxation was observed in thicker films and the dots transited from broad size distribution to size equalization and eventually to broad size distribution again as a result of the generation of threading dislocations in the quantum dot superlattice films.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2004.10.057</doi><tpages>5</tpages></addata></record> |
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subjects | 61.82.Rx 81.05.Cy 81.15.Hi A1. Nanostructures A3. Molecular beam epitaxy B2. Semiconducting germanium Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Elasticity, elastic constants Exact sciences and technology Materials science Mechanical and acoustical properties of condensed matter Mechanical properties of solids Nanoscale materials and structures: fabrication and characterization Physics Quantum dots |
title | The effect of plastic strain relaxation on the morphology of Ge quantum dot superlattices |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T15%3A57%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20effect%20of%20plastic%20strain%20relaxation%20on%20the%20morphology%20of%20Ge%20quantum%20dot%20superlattices&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Liu,%20J.L.&rft.date=2005-02-01&rft.volume=274&rft.issue=3-4&rft.spage=367&rft.epage=371&rft.pages=367-371&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/10.1016/j.jcrysgro.2004.10.057&rft_dat=%3Cproquest_cross%3E29061761%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c373t-f0a5070cfd4a9b4df41bd7e125a316ace58cf5416a590ec9d27b941ee721d5f73%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=29061761&rft_id=info:pmid/&rfr_iscdi=true |