Self-Gating of Quantum-Point Contacts at the Onset of Electron Tunneling

We have investigated the properties of quantum-point contacts (QPCs) in the closed-channel regime, at the onset of electron transport due to quantum tunneling. In this regime, those properties are strongly affected by self-gating: the bias voltage drops across the point contact and changes locally t...

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Bibliographic Details
Published in:Journal of low temperature physics 2007-01, Vol.146 (1-2), p.275-283
Main Authors: Gloos, K., Utko, P., Aagesen, M., Sørensen, C. B., Lindelöf, P. E.
Format: Article
Language:English
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Summary:We have investigated the properties of quantum-point contacts (QPCs) in the closed-channel regime, at the onset of electron transport due to quantum tunneling. In this regime, those properties are strongly affected by self-gating: the bias voltage drops across the point contact and changes locally the net voltage difference between the contact channel and the gate electrodes, thereby varying the channel width. On the other hand, self-gating is strongly suppressed when the conduction electron system in the contact channel is depleted. We use a simple quasi-classical model to analyze the properties of such contacts.
ISSN:0022-2291
1573-7357
DOI:10.1007/s10909-006-9263-z