Threshold voltage mismatch and intra-die leakage current in digital CMOS circuits

Due to device and voltage scaling scenarios for present and future deep-submicron CMOS technologies, it is inevitable that the off-state current (I/sub off/) of MOSFET transistors increases as the technology minimum dimensions scale down. Experimental evidence shows that the leakage current distribu...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2004-01, Vol.39 (1), p.157-168
Main Authors: Pineda de Gyvez, J., Tuinhout, H.P.
Format: Article
Language:English
Subjects:
Circuit synthesis
Circuits
CMOS
CMOS digital integrated circuits
CMOS technology
Delay estimation
Digital circuits
Energy consumption
Fluctuations
Integrated circuits
Leakage current
MOSFET circuits
MOSFETs
Semiconductor devices
Threshold voltage
Transistors
Voltage
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Summary:Due to device and voltage scaling scenarios for present and future deep-submicron CMOS technologies, it is inevitable that the off-state current (I/sub off/) of MOSFET transistors increases as the technology minimum dimensions scale down. Experimental evidence shows that the leakage current distribution of modern deep-submicron designs not only has a higher mean value but it also presents a larger variability as well. In this paper, we investigate the impact of threshold voltage mismatch as one plausible source for this increased variability. In digital circuit design, it is commonly assumed that the threshold voltage difference (mismatch) of static CMOS cells is negligible. However, threshold voltage mismatch (/spl Delta/V/sub to/) has a two-sided effect on the off-state current. Namely, the total cell's current can increase or decrease depending upon the direction of the V/sub t/ mismatch shift. This effect can be so severe that I/sub off/ can increase by more than one order of magnitude with respect to its nominal value due only to V/sub to/ mismatch. We further show through experimental results that the V/sub to/ mismatch of paired transistors working in the subthreshold regime can be worse by a factor of two as compared to transistors working in the saturation or linear regions. A factor of two larger spread is obviously quite devastating in terms of area, speed, and power consumption, should it be desired to attain the same I/sub off/ level as for a V/sub to/ mismatch characterized out of the subthreshold regime.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2003.820873