Time-resolved two-photon photoelectron spectroscopy of carrier dynamics on the Si(0 0 1)-(2 × 1) surface

The electron populations of the intrinsic surface unoccupied state ( D down) and of the minimum of bulk conduction band (CBM) after fs-pulse excitation on the Si(0 0 1)-(2 × 1) surface were measured at two different excitation wavelengths ( λ ex) by means of time-resolved two-photon photoelectron sp...

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Bibliographic Details
Published in:Surface science 2005-11, Vol.593 (1), p.26-31
Main Authors: Tanaka, S., Tanimura, K.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Laser methods
Low index single crystal surfaces
Photoelectron spectroscopy
Physics
Silicon
Surface electronic phenomena
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Summary:The electron populations of the intrinsic surface unoccupied state ( D down) and of the minimum of bulk conduction band (CBM) after fs-pulse excitation on the Si(0 0 1)-(2 × 1) surface were measured at two different excitation wavelengths ( λ ex) by means of time-resolved two-photon photoelectron spectroscopy. The decay of populations of both states is faster for short-wavelength excitation at 377 nm than that at 754 nm, showing a prominent λ ex-dependent decay in sub-ns temporal domain. In this temporal domain, the populations of both D down and CBM are proportional with each other. The results show that the decay of D down population is governed by the de-population of bulk electrons near surface via a short lifetime at the D down state.
ISSN:0039-6028
1879-2758
DOI:10.1016/j.susc.2005.06.042