Vacancy defects induced in sintered polished UO2 disks by helium implantation

Vacancy defects have been investigated in sintered polished and annealed uranium oxide disks. Slow positron beam coupled with Doppler broadening spectrometer was used to probe the track region of 1 MeV 3He ions implanted in uranium dioxide (UO2) disks. The low and high momentum annihilation fraction...

Full description

Saved in:
Bibliographic Details
Published in:Applied surface science 2006-02, Vol.252 (9), p.3256-3261
Main Authors: LABRIM, H, BARTHE, M.-F, DESGARDIN, P, SAUVAGE, T, BLONDIAUX, G, CORBEL, C, PIRON, J. P
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Physics
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Vacancy defects have been investigated in sintered polished and annealed uranium oxide disks. Slow positron beam coupled with Doppler broadening spectrometer was used to probe the track region of 1 MeV 3He ions implanted in uranium dioxide (UO2) disks. The low and high momentum annihilation fractions, S and W, respectively, were measured in the first micrometer near surface region of the disks as a function of positron energy. The S and W values indicate that the 1 MeV He ions induce vacancy defects in the track region of their range. The vacancy defect depth distribution is heterogeneous. The positron trapping at these vacancy defects increases with the depth and with the implantation fluence indicating an increase of the vacancy defect concentration. The nature of the induced vacancy defects does not change with the fluence.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2005.08.045