Band-to-band tunneling related effects in a thin MOS structure1

The effect of band-to-band tunneling (BBT) on the behaviour of MOS structures doped to 1018-1019 cm-3 with an 2-3 nm oxide is studied theoretically. The BBT is shown to supply the minority carriers toward the Si/SiO2 interface. This effect can support the inversion layer in the non-equilibrium and m...

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Bibliographic Details
Published in:Microelectronic engineering 2004-04, Vol.72 (1-4), p.180-184
Main Authors: Vexler, M I, Shulekin, A F, Grgec, D, Grekhov, I V, Meinerzhagen, B
Format: Article
Language:English
Online Access:Get full text
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Summary:The effect of band-to-band tunneling (BBT) on the behaviour of MOS structures doped to 1018-1019 cm-3 with an 2-3 nm oxide is studied theoretically. The BBT is shown to supply the minority carriers toward the Si/SiO2 interface. This effect can support the inversion layer in the non-equilibrium and modify the I-V and C-V curves. The experimental data on MOS diodes, supporting the theory, are also presented.
ISSN:0167-9317
DOI:10.1016/j.mee.2003.12.033