Crystal Growth and High Temperature Piezoelectricity of La3Ta0.5Ga5.5 ? xAlxO14 Crystals

Lanthanum tantalum gallate doped with Al3+ (La3Ta0.5Ga5.5-xAlxO14), with x = 0.1-0.9, was synthesised by solid state reaction to determine the solid solution range and congruency. The solid state reaction was repeated several times to ensure homogeneity. Crystals were grown using the micro pull-down...

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Bibliographic Details
Published in:Journal of electroceramics 2004-07, Vol.13 (1-3), p.471-478
Main Authors: Jung, I H, Fukuda, T, Auh, K H
Format: Article
Language:English
Subjects:
Crystals
High temperature
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Summary:Lanthanum tantalum gallate doped with Al3+ (La3Ta0.5Ga5.5-xAlxO14), with x = 0.1-0.9, was synthesised by solid state reaction to determine the solid solution range and congruency. The solid state reaction was repeated several times to ensure homogeneity. Crystals were grown using the micro pull-down system. Crystals were also prepared by the Czochralski system, without cracking or inclusions, and with high optical transparency. Congruent melting was observed over a wide composition range, but did not destabilise the melt during crystal growth. The distribution coefficient of the substituted Al3+ ions was close to unity. Doping enhanced the stability of the piezoelectric properties from room temperature up to 500 C. 14 refs.
ISSN:1385-3449
1573-8663
DOI:10.1007/s10832-004-5144-5