Crystal Growth and Piezoelectric Properties of T1In1-xYbxSe2 (0 < or = x < or = 0.06)

A process is described for the growth of TlIn1-xYbxSe, (0 < or = x < or = 0.06) crystals. The piezoelectric properties of the crystals are studied at different strains, temperatures, and illuminances, and their gage factor is determined.

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Bibliographic Details
Published in:Inorganic materials 2005-11, Vol.41 (11), p.1150-1152
Main Authors: Gojaev, E M, Gyul'mamedov, K D, Allakhyarov, E A, Dadashov, M T
Format: Article
Language:English
Online Access:Get full text
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Summary:A process is described for the growth of TlIn1-xYbxSe, (0 < or = x < or = 0.06) crystals. The piezoelectric properties of the crystals are studied at different strains, temperatures, and illuminances, and their gage factor is determined.
ISSN:0020-1685