Magnetocapacitance at the Ni/BiInO3 Schottky Interface

We report the observation of a magnetocapacitance effect at the interface between Ni and epitaxial nonpolar BiInO3 thin films at room temperature. A detailed surface study using X-ray photoelectron spectroscopy (XPS) reveals the formation of an intermetallic Ni–Bi alloy at the Ni/BiInO3 interface an...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2024-01, Vol.16 (3), p.4108-4116
Main Authors: Viswan, Gauthami, Wang, Kun, Streubel, Robert, Hong, Xia, Valanoor, Nagarajan, Sando, Daniel, Dowben, Peter A.
Format: Article
Language:English
Subjects:
Surfaces, Interfaces, and Applications
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Summary:We report the observation of a magnetocapacitance effect at the interface between Ni and epitaxial nonpolar BiInO3 thin films at room temperature. A detailed surface study using X-ray photoelectron spectroscopy (XPS) reveals the formation of an intermetallic Ni–Bi alloy at the Ni/BiInO3 interface and a shift in the Bi 4f and In 3d core levels to higher binding energies with increasing Ni thickness. The latter infers band bending in BiInO3, corresponding to the formation of a p-type Schottky barrier. The current–voltage characteristics of the Ni/BiInO3/(Ba,Sr)­RuO3/NdScO3(110) heterostructure show a significant dependence on the applied magnetic field and voltage cycling, which can be attributed to voltage-controlled band bending and spin-polarized charge accumulation in the vicinity of the Ni/BiInO3 interface. The magnetocapacitance effect can be realized at room temperature without involving multiferroic materials.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.3c13478