Charge trapping and detrapping in HfO2 high-κ MOS capacitors using internal photoemission

The focus of this paper is charge trapping within HfO2 high-κ metal-oxide-semiconductor capacitors. Charge was injected by constant voltage stress and internal photoemission. Capacitance-voltage and photocurrent-voltage measurements were taken in order to determine the centroid of oxide charge withi...

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Bibliographic Details
Published in:Microelectronic engineering 2005-06, Vol.80, p.58-61
Main Authors: Felnhofer, D., Gusev, E.P., Jamison, P., Buchanan, D.A.
Format: Article
Language:English
Subjects:
Applied sciences
charge centroid
Dielectric, amorphous and glass solid devices
Electronics
Exact sciences and technology
high-κ
internal photoemission
oxide charge trapping
photocurrent
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The focus of this paper is charge trapping within HfO2 high-κ metal-oxide-semiconductor capacitors. Charge was injected by constant voltage stress and internal photoemission. Capacitance-voltage and photocurrent-voltage measurements were taken in order to determine the centroid of oxide charge within the high-κ gate stack. Shifts in photocurrent response of the Al/HfO2/SiO2/p-type Si capacitors place the centroid within the HfO2 dielectric, near the Al gate. Large flatband voltage and photocurrent shifts were measured which indicates a large density of traps within these films. Measurements and observations support the result that it is the bulk traps within the HfO2 which contribute to charge trapping.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2005.04.044