Gas Release of SiC Implanted with Deuterium or Helium

Helium (He+) or Deuterium (D2+) (20 keV) was implanted into polycrystalline β‐SiC with an ion dose of 7.2 × 1021 (D or He)/m2. The implanted specimens were heated at a heating rate of 10 or 20 K/min from room temperature to 1373 K, and the thermal release spectroscopic data were obtained. A sharp pe...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 2005-08, Vol.88 (8), p.2319-2321
Main Authors: Aihara, J., Sawa, K., Furuya, Y., Hojo, T., Furuno, S., Yamamoto, H., Hojou, K., Ishihara, M.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Doping and impurity implantation in other materials
Exact sciences and technology
Gases
Helium
Physics
Polycrystals
Structure of solids and liquids
crystallography
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Summary:Helium (He+) or Deuterium (D2+) (20 keV) was implanted into polycrystalline β‐SiC with an ion dose of 7.2 × 1021 (D or He)/m2. The implanted specimens were heated at a heating rate of 10 or 20 K/min from room temperature to 1373 K, and the thermal release spectroscopic data were obtained. A sharp peak appeared at approximately 1270 K in the case of He release, and here the activation energy was estimated to be approximately 4.4 eV. Two overlapped peaks appeared at approximately 900 and 1200 K in the case of D2 release. The shapes of spectra showed strong dependence on the heating rate.
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1551-2916.2005.00405.x