Growth and characterization of barium-doped potassium tantalate crystals

• Published in: Journal of crystal growth 2005-08, Vol.282 (1), p.66-71
• Main Authors: Aravazhi, S., Tapponnier, A., Günther, D., Günter, P.
• Format: Article
• Language: English
• Subjects: A1. Doping; A2. Growth from high temperature solutions; A2. Top seeded solution growth; B1. Perovskites; B2. Dielectric materials; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Laser materials; Materials science; Methods of crystal growth; physics of crystal growth; Optical materials; Optics; Physics
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2005.04.074

Potassium tantalate (KTaO 3) crystals doped with barium were grown by top-seeded solution growth (TSSG) method. The effect of seed orientation on the external habit formation was studied. It was found that while using an (1 1 0)-oriented seed the crystal yield was much higher than (1 0 0)-oriented seed, also the crystal had a wide (1 0 0) plane. It was found that while using an (1 1 0) seed the barium doping was homogeneous without any striations. The presence of barium in the crystal was estimated by laser ablation induction-coupled plasma studies. The composition of the crystals was studied by Rutherford backscattering (RBS) measurements. Characterization studies such as dielectric, X-ray and electrical conductivity studies were performed for barium-doped KT. High-quality bulk KT:Ba crystals of size (4×3×3 cm 3) weighing 20 g were grown.