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Electrical properties of films grown on W and Mo substrates by titanium ion implantation in nitrogen atmosphere
Films consisting of alternating nitride and oxide layers differing in phase composition and structure are grown on polycrystalline tungsten and molybdenum substrates by ion implantation. The resistivity and thermoelectric power of the films are measured as functions of temperature, and the temperatu...
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Published in: | Inorganic materials 2005-03, Vol.41 (3), p.243-246 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | Films consisting of alternating nitride and oxide layers differing in phase composition and structure are grown on polycrystalline tungsten and molybdenum substrates by ion implantation. The resistivity and thermoelectric power of the films are measured as functions of temperature, and the temperature coefficient of their resistance is determined. The phase composition and electrical properties of the films are shown to be governed by the nitrogen-ion dose delivered to the titanium target. |
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ISSN: | 0020-1685 1608-3172 |
DOI: | 10.1007/s10789-005-0117-x |