Galvanic Corrosion Between Copper and Tantalum under CMP Conditions

Chemical mechanical planarization (CMP) has emerged as the most viable method to planarize copper thin films during fabrication of integrated circuits. The final stage of copper CMP requires the simultaneous polishing of copper and the barrier metal, where the metals are prone to galvanic corrosion...

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Published in:Journal of the Electrochemical Society 2006-01, Vol.153 (4), p.F53-F59
Main Authors: Tamilmani, Subramanian, Huang, Wayne, Raghavan, Srini
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Language:English
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cited_by cdi_FETCH-LOGICAL-c361t-e00ebe769dac715dbba3f00e21d799d986c2979bcdea51237dbb12255a9aad603
cites cdi_FETCH-LOGICAL-c361t-e00ebe769dac715dbba3f00e21d799d986c2979bcdea51237dbb12255a9aad603
container_end_page F59
container_issue 4
container_start_page F53
container_title Journal of the Electrochemical Society
container_volume 153
creator Tamilmani, Subramanian
Huang, Wayne
Raghavan, Srini
description Chemical mechanical planarization (CMP) has emerged as the most viable method to planarize copper thin films during fabrication of integrated circuits. The final stage of copper CMP requires the simultaneous polishing of copper and the barrier metal, where the metals are prone to galvanic corrosion due to exposure to slurry. In this study, the extent of galvanic corrosion between copper and tantalum was estimated using electrochemical polarization measurements. A novel setup was designed to make direct measurement of the galvanic current between copper and tantalum and was successfully used to measure galvanic current in two different chemical systems. Galvanic corrosion current values obtained from polarization and direct measurements are compared and their implications during barrier polishing are discussed.
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29132812</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>29132812</sourcerecordid><originalsourceid>FETCH-LOGICAL-c361t-e00ebe769dac715dbba3f00e21d799d986c2979bcdea51237dbb12255a9aad603</originalsourceid><addsrcrecordid>eNotkMFOwzAMhnMAiTE48AY9IXHoiJO2aY5QwUAagsM4R27iSUVdWpIWxNuTaTtZ_vzZkn_GboCvAAp9DysBipe1PGMLzkHmRVXCBbuM8Su1UBdqwZo19j_oO5s1QwhD7AafPdL0S-QTGUcKGXqXbdFP2M_7bPYuoebtI02966bkxyt2vsM-0vWpLtnn89O2eck37-vX5mGTW1nBlBPn1JKqtEOroHRti3KXmACntHa6rqzQSrfWEZYgpEoGCFGWqBFdxeWS3R7vjmH4nilOZt9FS32PnoY5GqFBijptLtndUbTpoxhoZ8bQ7TH8GeDmEI0Bc4pG_gM3W1eu</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29132812</pqid></control><display><type>article</type><title>Galvanic Corrosion Between Copper and Tantalum under CMP Conditions</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Tamilmani, Subramanian ; Huang, Wayne ; Raghavan, Srini</creator><creatorcontrib>Tamilmani, Subramanian ; Huang, Wayne ; Raghavan, Srini</creatorcontrib><description>Chemical mechanical planarization (CMP) has emerged as the most viable method to planarize copper thin films during fabrication of integrated circuits. The final stage of copper CMP requires the simultaneous polishing of copper and the barrier metal, where the metals are prone to galvanic corrosion due to exposure to slurry. In this study, the extent of galvanic corrosion between copper and tantalum was estimated using electrochemical polarization measurements. A novel setup was designed to make direct measurement of the galvanic current between copper and tantalum and was successfully used to measure galvanic current in two different chemical systems. Galvanic corrosion current values obtained from polarization and direct measurements are compared and their implications during barrier polishing are discussed.</description><identifier>ISSN: 0013-4651</identifier><identifier>DOI: 10.1149/1.2170583</identifier><language>eng</language><ispartof>Journal of the Electrochemical Society, 2006-01, Vol.153 (4), p.F53-F59</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-e00ebe769dac715dbba3f00e21d799d986c2979bcdea51237dbb12255a9aad603</citedby><cites>FETCH-LOGICAL-c361t-e00ebe769dac715dbba3f00e21d799d986c2979bcdea51237dbb12255a9aad603</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Tamilmani, Subramanian</creatorcontrib><creatorcontrib>Huang, Wayne</creatorcontrib><creatorcontrib>Raghavan, Srini</creatorcontrib><title>Galvanic Corrosion Between Copper and Tantalum under CMP Conditions</title><title>Journal of the Electrochemical Society</title><description>Chemical mechanical planarization (CMP) has emerged as the most viable method to planarize copper thin films during fabrication of integrated circuits. The final stage of copper CMP requires the simultaneous polishing of copper and the barrier metal, where the metals are prone to galvanic corrosion due to exposure to slurry. In this study, the extent of galvanic corrosion between copper and tantalum was estimated using electrochemical polarization measurements. A novel setup was designed to make direct measurement of the galvanic current between copper and tantalum and was successfully used to measure galvanic current in two different chemical systems. Galvanic corrosion current values obtained from polarization and direct measurements are compared and their implications during barrier polishing are discussed.</description><issn>0013-4651</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNotkMFOwzAMhnMAiTE48AY9IXHoiJO2aY5QwUAagsM4R27iSUVdWpIWxNuTaTtZ_vzZkn_GboCvAAp9DysBipe1PGMLzkHmRVXCBbuM8Su1UBdqwZo19j_oO5s1QwhD7AafPdL0S-QTGUcKGXqXbdFP2M_7bPYuoebtI02966bkxyt2vsM-0vWpLtnn89O2eck37-vX5mGTW1nBlBPn1JKqtEOroHRti3KXmACntHa6rqzQSrfWEZYgpEoGCFGWqBFdxeWS3R7vjmH4nilOZt9FS32PnoY5GqFBijptLtndUbTpoxhoZ8bQ7TH8GeDmEI0Bc4pG_gM3W1eu</recordid><startdate>20060101</startdate><enddate>20060101</enddate><creator>Tamilmani, Subramanian</creator><creator>Huang, Wayne</creator><creator>Raghavan, Srini</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7SE</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8G</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20060101</creationdate><title>Galvanic Corrosion Between Copper and Tantalum under CMP Conditions</title><author>Tamilmani, Subramanian ; Huang, Wayne ; Raghavan, Srini</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-e00ebe769dac715dbba3f00e21d799d986c2979bcdea51237dbb12255a9aad603</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tamilmani, Subramanian</creatorcontrib><creatorcontrib>Huang, Wayne</creatorcontrib><creatorcontrib>Raghavan, Srini</creatorcontrib><collection>CrossRef</collection><collection>Corrosion Abstracts</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Copper Technical Reference Library</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tamilmani, Subramanian</au><au>Huang, Wayne</au><au>Raghavan, Srini</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Galvanic Corrosion Between Copper and Tantalum under CMP Conditions</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>2006-01-01</date><risdate>2006</risdate><volume>153</volume><issue>4</issue><spage>F53</spage><epage>F59</epage><pages>F53-F59</pages><issn>0013-4651</issn><abstract>Chemical mechanical planarization (CMP) has emerged as the most viable method to planarize copper thin films during fabrication of integrated circuits. The final stage of copper CMP requires the simultaneous polishing of copper and the barrier metal, where the metals are prone to galvanic corrosion due to exposure to slurry. In this study, the extent of galvanic corrosion between copper and tantalum was estimated using electrochemical polarization measurements. A novel setup was designed to make direct measurement of the galvanic current between copper and tantalum and was successfully used to measure galvanic current in two different chemical systems. Galvanic corrosion current values obtained from polarization and direct measurements are compared and their implications during barrier polishing are discussed.</abstract><doi>10.1149/1.2170583</doi><oa>free_for_read</oa></addata></record>
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title Galvanic Corrosion Between Copper and Tantalum under CMP Conditions
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T00%3A03%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Galvanic%20Corrosion%20Between%20Copper%20and%20Tantalum%20under%20CMP%20Conditions&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=Tamilmani,%20Subramanian&rft.date=2006-01-01&rft.volume=153&rft.issue=4&rft.spage=F53&rft.epage=F59&rft.pages=F53-F59&rft.issn=0013-4651&rft_id=info:doi/10.1149/1.2170583&rft_dat=%3Cproquest_cross%3E29132812%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c361t-e00ebe769dac715dbba3f00e21d799d986c2979bcdea51237dbb12255a9aad603%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=29132812&rft_id=info:pmid/&rfr_iscdi=true