Growth and morphology of one-dimensional SiC nanostructures without catalyst assistant

Silicon carbide (SiC) nanowires and a new kind of SiC nanostructure, necklace-like nanowires, had been synthesized by using SiO 2 and graphite powder as the raw materials, during which the course of a simple chemical vapor deposition (CVD) technique without any catalyst was applied. The products wer...

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Bibliographic Details
Published in:Materials chemistry and physics 2006-01, Vol.95 (1), p.140-144
Main Authors: Wei, Jian, Li, Ke-Zhi, Li, He-Jun, Fu, Qian-Gang, Zhang, Lei
Format: Article
Language:English
Subjects:
Carbides
Chemical vapor deposition (CVD)
Crystal growth
Nanostructures
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Summary:Silicon carbide (SiC) nanowires and a new kind of SiC nanostructure, necklace-like nanowires, had been synthesized by using SiO 2 and graphite powder as the raw materials, during which the course of a simple chemical vapor deposition (CVD) technique without any catalyst was applied. The products were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The as-received SiC nanowires have diameters in the range of 50–100 nm and lengths up to several tens of micrometers. The growth of these one-dimensional nanostructures is considered to involve a vapor–solid process and the possible growth mechanism of SiC nanowires is proposed. It is thought that the necklace-like SiC nanowires is formed by a two-step process.
ISSN:0254-0584
1879-3312
DOI:10.1016/j.matchemphys.2005.05.032