High-density nanometer-scale InSb dots formation using droplets heteroepitaxial growth by MOVPE

InSb nanostructures were grown by metalorganic vapor-phase epitaxy, using the droplet heteroepitaxial mode. We studied the factors governing the nanodots properties, comparing the effects of growth conditions, substrate lattice mismatch and substrate chemical composition. The best results, in terms...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 2006-06, Vol.291 (2), p.363-369
Main Authors: Shusterman, S., Paltiel, Y., Sher, A., Ezersky, V., Rosenwaks, Y.
Format: Article
Language:English
Subjects:
A1. Surface structure
A3. Droplet epitaxy
A3. Metalorganic vapor-phase epitaxy
B1. Antimonides
B1. InSb
B1. Nanomaterials
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Nanoscale materials and structures: fabrication and characterization
Physics
Quantum dots
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:InSb nanostructures were grown by metalorganic vapor-phase epitaxy, using the droplet heteroepitaxial mode. We studied the factors governing the nanodots properties, comparing the effects of growth conditions, substrate lattice mismatch and substrate chemical composition. The best results, in terms of size and nanodots density, were obtained on As-based substrates, either GaAs or InAs. InSb dots as small as 12 nm with a density of 1×10 11 cm −2 were obtained at growth temperature range of 350–430 °C. In addition, we present low-temperature photoluminescence results of the InSb quantum dot exhibiting peak at 0.27–0.3 eV, dependent on the dots size. Growth conditions, composition of the dots and mechanisms as well as the differences from the well-known Stranski–Krastanov growth mode are discussed.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2006.03.042